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2006•Applied Physics LettersRequires access

Wide-band gap oxide alloy: BeZnO

Yung Ryel Ryu, T. S. Lee, Jorge Lubguban, Adrian Corman, H. W. White, J. H. Leem, Min Han, Y. S. Park, C. J. Youn, W. J. Kim

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Abstract

A wide-band gap oxide alloy, BeZnO, is proposed and studied in this letter. The BeZnO films were deposited on sapphire substrates by our hybrid beam deposition growth method. The value of the energy band gap of BeZnO can be efficiently engineered to vary from the ZnO band gap (3.4 eV) to that of BeO (10.6 eV). BeZnO can be used for fabricating films and heterostructures of ZnO-based electronic and photonic devices and for other applications. Changes in the measured energy band gap and lattice constant values with Be content are described for BeZnO alloys.

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What this paper is about

A wide-band gap oxide alloy, BeZnO, is proposed and studied in this letter. The BeZnO films were deposited on sapphire substrates by our hybrid beam deposition growth method. The value of the energy band gap of BeZnO can be efficiently engineered to vary from the ZnO band gap (3.4 eV) to that of BeO (10.6 eV). BeZnO can be used for fabricating films and heterostructures of ZnO-based electronic and photonic devices and for other applications. Changes in the measured energy band gap and lattice constant values with Be content are described for BeZnO alloys.

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Available abstract

A wide-band gap oxide alloy, BeZnO, is proposed and studied in this letter. The BeZnO films were deposited on sapphire substrates by our hybrid beam deposition growth method. The value of the energy band gap of BeZnO can be efficiently engineered to vary from the ZnO band gap (3.4 eV) to that of BeO (10.6 eV). BeZnO can be used for fabricating films and heterostructures of ZnO-based electronic and photonic devices and for other applications. Changes in the measured energy band gap and lattice constant values with Be content are described for BeZnO alloys.

Key concepts: Band gap, Materials science, Wide-bandgap semiconductor, Alloy, Lattice constant, Optoelectronics, Heterojunction, Sapphire

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