1997•Materials Science and Engineering BRequires access

The structure of GaN layers grown on SiC and sapphire by molecular beam epitaxy

P. Ruterana, P. Vermaut, V. Potin, G. Nouet, Andrei E. Botchkarev, A. Salvador, Hadis Morkoç

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Key concepts: Sapphire, Molecular beam epitaxy, Epitaxy, Materials science, Optoelectronics, Electron cyclotron resonance, Layer (electronics), Optics

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The structure of GaN layers grown on SiC and sapphire by molecular beam epitaxy — Research Paper | ScholarLens