1981Journal of the Optical Society of AmericaRequires access

Quantum size effects and optical properties of very thin films

N. A. Mancini, G. Giaquinta, A. Pennisi

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Abstract

The photoelectron yield has been measured in ultrathin InSb films as a function of the thickness in the energy-photon range 2–6 eV. The shift of the threshold for the photoelectrons from the conduction band and the strict inverse thickness dependence of the maximum in the yield of photoelectrons from the valence band permits the unambiguous testing of quantum size effects.

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What this paper is about

The photoelectron yield has been measured in ultrathin InSb films as a function of the thickness in the energy-photon range 2–6 eV. The shift of the threshold for the photoelectrons from the conduction band and the strict inverse thickness dependence of the maximum in the yield of photoelectrons from the valence band permits the unambiguous testing of quantum size effects.

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Available abstract

The photoelectron yield has been measured in ultrathin InSb films as a function of the thickness in the energy-photon range 2–6 eV. The shift of the threshold for the photoelectrons from the conduction band and the strict inverse thickness dependence of the maximum in the yield of photoelectrons from the valence band permits the unambiguous testing of quantum size effects.

Key concepts: Photoelectric effect, Quantum yield, Photon energy, Materials science, Conduction band, Photon, Inverse, Valence band

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