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Comparative radiation resistance calculation for graded- and constant-composition n AlxGa1−xAs–p AlzGa1−zAs solar cells

JAMES A. HUTCHBY

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Abstract

The performance and radiation resistance of a new double-graded-band-gap n AlxGa1−xAs–p AlzGa1−zAs solar cell are theoretically determined. The performance of this device is similar to that of the single-graded-band-gap cell. The power-conversion efficiencies of both graded-band-gap structures are shown to be less sensitive to minority-carrier lifetime degradation than a similar constant-composition n AlxGa1−xAs–p GaAs heteroface cell.

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What this paper is about

The performance and radiation resistance of a new double-graded-band-gap n AlxGa1−xAs–p AlzGa1−zAs solar cell are theoretically determined. The performance of this device is similar to that of the single-graded-band-gap cell. The power-conversion efficiencies of both graded-band-gap structures are shown to be less sensitive to minority-carrier lifetime degradation than a similar constant-composition n AlxGa1−xAs–p GaAs heteroface cell.

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Available abstract

The performance and radiation resistance of a new double-graded-band-gap n AlxGa1−xAs–p AlzGa1−zAs solar cell are theoretically determined. The performance of this device is similar to that of the single-graded-band-gap cell. The power-conversion efficiencies of both graded-band-gap structures are shown to be less sensitive to minority-carrier lifetime degradation than a similar constant-composition n AlxGa1−xAs–p GaAs heteroface cell.

Key concepts: Band gap, Radiation resistance, X-ray absorption spectroscopy, Radiation, Constant (computer programming), Solar cell, Materials science, Chemistry

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