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2003•Unpublished venueRequires access

Lithography solution for 65-nm node system LSIs

Takahiro Matsuo, Masayuki Endo, Shinji Kishimura, Akio Misaka, Masaru Sasago

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Abstract

For 65-nm node devices, we have systematically investigated the lithographic margin of electron-beam projection lithography (EPL), ArF lithography and vacuum ultraviolet (VUV) lithography. Among them, EPL has sufficient margin and excellent pattern fidelity and our experiments have demonstrated that it can fabricate 65-nm node device patterns. Therefore, EPL is a strong candidate for 65-nm node lithography.

About this research paper

What this paper is about

For 65-nm node devices, we have systematically investigated the lithographic margin of electron-beam projection lithography (EPL), ArF lithography and vacuum ultraviolet (VUV) lithography. Among them, EPL has sufficient margin and excellent pattern fidelity and our experiments have demonstrated that it can fabricate 65-nm node device patterns. Therefore, EPL is a strong candidate for 65-nm node lithography.

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Available abstract

For 65-nm node devices, we have systematically investigated the lithographic margin of electron-beam projection lithography (EPL), ArF lithography and vacuum ultraviolet (VUV) lithography. Among them, EPL has sufficient margin and excellent pattern fidelity and our experiments have demonstrated that it can fabricate 65-nm node device patterns. Therefore, EPL is a strong candidate for 65-nm node lithography.

Key concepts: Lithography, Next-generation lithography, Extreme ultraviolet lithography, Immersion lithography, Electron-beam lithography, X-ray lithography, Materials science, Computational lithography

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