Intrinsic life-time and external manipulation of Néel states in antiferromagnetic adatom spins on semiconductor surfaces
Jun Li, Bang‐Gui Liu
Abstract
Open-access reader
Jun Li, Bang‐Gui Liu
Abstract
Open-access reader
It has been proposed that antiferromagnetic Fe adatom spins on semiconductor Cu–N surfaces can be used to store information (Loth et al 2012 Science 335 196). Here, we investigate spin dynamics of such antiferromagnetic systems through Monte Carlo simulations. We find out the temperature and size laws of switching rates of Néel states and show that the Néel states can become stable enough for the information storage when the number of spins reaches one or two dozens of the Fe spins. We also explore promising methods for manipulating the Néel states. These could help realize information storage with such antiferromagnetic spin systems.
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It has been proposed that antiferromagnetic Fe adatom spins on semiconductor Cu–N surfaces can be used to store information (Loth et al 2012 Science 335 196). Here, we investigate spin dynamics of such antiferromagnetic systems through Monte Carlo simulations. We find out the temperature and size laws of switching rates of Néel states and show that the Néel states can become stable enough for the information storage when the number of spins reaches one or two dozens of the Fe spins. We also explore promising methods for manipulating the Néel states. These could help realize information storage with such antiferromagnetic spin systems.
Key concepts: Spins, Antiferromagnetism, Condensed matter physics, Spin (aerodynamics), Semiconductor, Physics, Materials science, Quantum mechanics