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2008•German Microwave ConferenceRequires access

High Power Doherty Amplifier Design for UMTS Application

Asdesach Z. Markos, Guenter Kompa

Open publisher page 2 citations

Abstract

PA) using laterally diffused metal oxide semiconductor (LDMOS) technology is presented. A low impedance thru-reflect-line (TRL) calibration technique has been used to characterize the device and verify the large signal model of a commercial 10W packaged LDMOS device. A Doherty amplifier is designed using two of the 10W LDMOS devices as class AB main amplifier and class C peaking amplifier. A peak power added efficiency (PAE) of 52% (59% drain efficiency) and 45% has been simulated at the saturated output power of 43 dBm and 6 dB back off, respectively.

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What this paper is about

PA) using laterally diffused metal oxide semiconductor (LDMOS) technology is presented. A low impedance thru-reflect-line (TRL) calibration technique has been used to characterize the device and verify the large signal model of a commercial 10W packaged LDMOS device. A Doherty amplifier is designed using two of the 10W LDMOS devices as class AB main amplifier and class C peaking amplifier. A peak power added efficiency (PAE) of 52% (59% drain efficiency) and 45% has been simulated at the saturated output power of 43 dBm and 6 dB back off, respectively.

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Available abstract

PA) using laterally diffused metal oxide semiconductor (LDMOS) technology is presented. A low impedance thru-reflect-line (TRL) calibration technique has been used to characterize the device and verify the large signal model of a commercial 10W packaged LDMOS device. A Doherty amplifier is designed using two of the 10W LDMOS devices as class AB main amplifier and class C peaking amplifier. A peak power added efficiency (PAE) of 52% (59% drain efficiency) and 45% has been simulated at the saturated output power of 43 dBm and 6 dB back off, respectively.

Key concepts: LDMOS, Amplifier, Doherty amplifier, RF power amplifier, Electrical engineering, Power-added efficiency, Materials science, FET amplifier

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