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High side application을 위한 700V double-RESURF nch-LDMOS 소자 개발

문남칠, 전본근, 권경욱, 이창준, 박주원, 성근식, 김희대, 김남주, 유광동

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Abstract

In this paper, two kinds of robust 700V DR-LDMOS (Double RESURF LDMOS) using thin epitaxial technology has been realized for level shifter and switching applications. The P-TOP layer is introduced to reduce on-resistance while maintaining high breakdown voltage for switching applications, and to increase on-breakdown voltage using JFET resistance for level shifter. The result is that the breakdown voltage of the 700V LDMOS for level shifter is 900V with on-breakdown of over 650V. In terms of switching applications, we have adopted HVPWELL layer of rainbow shape at source corner region to reduce n-type charge of N-EPI region and achieved the breakdown voltage of over 750V.

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What this paper is about

In this paper, two kinds of robust 700V DR-LDMOS (Double RESURF LDMOS) using thin epitaxial technology has been realized for level shifter and switching applications. The P-TOP layer is introduced to reduce on-resistance while maintaining high breakdown voltage for switching applications, and to increase on-breakdown voltage using JFET resistance for level shifter. The result is that the breakdown voltage of the 700V LDMOS for level shifter is 900V with on-breakdown of over 650V. In terms of switching applications, we have adopted HVPWELL layer of rainbow shape at source corner region to reduce n-type charge of N-EPI region and achieved the breakdown voltage of over 750V.

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Available abstract

In this paper, two kinds of robust 700V DR-LDMOS (Double RESURF LDMOS) using thin epitaxial technology has been realized for level shifter and switching applications. The P-TOP layer is introduced to reduce on-resistance while maintaining high breakdown voltage for switching applications, and to increase on-breakdown voltage using JFET resistance for level shifter. The result is that the breakdown voltage of the 700V LDMOS for level shifter is 900V with on-breakdown of over 650V. In terms of switching applications, we have adopted HVPWELL layer of rainbow shape at source corner region to reduce n-type charge of N-EPI region and achieved the breakdown voltage of over 750V.

Key concepts: LDMOS, JFET, Breakdown voltage, Materials science, Electrical engineering, Optoelectronics, Voltage, High voltage

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High side application을 위한 700V double-RESURF nch-LDMOS 소자 개발 — Research Paper | ScholarLens