Seong-Ho Park, Gwang-Hyun Lim, Yong-Hee Lee
Abstract
In this paper a 0.5 /spl mu/m BiCMOS device model library developed for RFIC applications has been introduced. The modeling methodology, the RF device characteristics available in this library, their equivalent circuit models with high-frequency parasitics, and modeling results have been described.
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In this paper a 0.5 /spl mu/m BiCMOS device model library developed for RFIC applications has been introduced. The modeling methodology, the RF device characteristics available in this library, their equivalent circuit models with high-frequency parasitics, and modeling results have been described.
Key concepts: RFIC, BiCMOS, Parasitic extraction, Computer science, Electronic engineering, Radio frequency, Electrical engineering, Engineering