2002•Unpublished venueRequires access

Progress in GaInNAs semiconductor lasers

Masahiko Kondow, Michael Craig Larson, Takeshi KITATANI, K. Nakahara, K. Uomi

Abstract

This paper reviews our recent progress in GaInNAs/GaAs long-wavelength lasers. GaInNAs has been applied in both edge-emitting and vertical-cavity surface-emitting lasers. We have experimentally demonstrated that the GaInNAs laser diodes are very promising to overcome the poor temperature behavior of the conventional InGaAsP-based long-wavelength lasers.

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Available abstract

Key concepts: Laser, Optoelectronics, Materials science, Semiconductor laser theory, Gallium arsenide, Diode, Wavelength, Tunable laser