1995Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIERequires access

Characterization of gallium nitride (GaN) blue LEDs

John M. Lindberg

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Abstract

Commercially available GaN blue LEDs have been characterized for use as light sources for chemical sensors. These new LEDs are a double heterojunction structure of InGaN/AlGaN that have a peak output at 450 nm. Other groups have investigated these devices for full color displays. This investigation addresses parameters critical to chemical sensors. Several different paramters were characterized including spectra verses drive current, spectra before and after aging, output power verses drive current, and lifetime. The results of this characterization indicate that these devices perform well for some chemical sensors.

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What this paper is about

Commercially available GaN blue LEDs have been characterized for use as light sources for chemical sensors. These new LEDs are a double heterojunction structure of InGaN/AlGaN that have a peak output at 450 nm. Other groups have investigated these devices for full color displays. This investigation addresses parameters critical to chemical sensors. Several different paramters were characterized including spectra verses drive current, spectra before and after aging, output power verses drive current, and lifetime. The results of this characterization indicate that these devices perform well for some chemical sensors.

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Available abstract

Commercially available GaN blue LEDs have been characterized for use as light sources for chemical sensors. These new LEDs are a double heterojunction structure of InGaN/AlGaN that have a peak output at 450 nm. Other groups have investigated these devices for full color displays. This investigation addresses parameters critical to chemical sensors. Several different paramters were characterized including spectra verses drive current, spectra before and after aging, output power verses drive current, and lifetime. The results of this characterization indicate that these devices perform well for some chemical sensors.

Key concepts: Light-emitting diode, Gallium nitride, Optoelectronics, Materials science, Characterization (materials science), Wide-bandgap semiconductor, Heterojunction, Indium gallium nitride

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