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InGaAs/InGaAsP quantum well infrared photodetector array operating at 1.5 μm wavelength

N. Li, Y.C. Chan, Simon Ng, T.K. Ong, Yee Loy Lam

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Abstract

An InGaAs/InGaAsP multiple quantum well (MQW) infrared photodetector array was fabricated on an InP substrate. This paper describes the fabrication and performance characteristics of four and seven pin photodiode element photodetector arrays suitable for 1.3-1.7 /spl mu/m wavelength applications. The average responsivity achieved was 7mA/W at 150 nm when the bias voltage was -3V. The minimum dark current is 15 /spl mu/A at -3V for a device area of 0.05mm/sup 2/.

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What this paper is about

An InGaAs/InGaAsP multiple quantum well (MQW) infrared photodetector array was fabricated on an InP substrate. This paper describes the fabrication and performance characteristics of four and seven pin photodiode element photodetector arrays suitable for 1.3-1.7 /spl mu/m wavelength applications. The average responsivity achieved was 7mA/W at 150 nm when the bias voltage was -3V. The minimum dark current is 15 /spl mu/A at -3V for a device area of 0.05mm/sup 2/.

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Available abstract

An InGaAs/InGaAsP multiple quantum well (MQW) infrared photodetector array was fabricated on an InP substrate. This paper describes the fabrication and performance characteristics of four and seven pin photodiode element photodetector arrays suitable for 1.3-1.7 /spl mu/m wavelength applications. The average responsivity achieved was 7mA/W at 150 nm when the bias voltage was -3V. The minimum dark current is 15 /spl mu/A at -3V for a device area of 0.05mm/sup 2/.

Key concepts: Responsivity, Photodetector, Optoelectronics, Photodiode, Dark current, Materials science, Gallium arsenide, Indium gallium arsenide

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