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Interaction of the primary radiation defects with impurities in p-type silicon at 80 to 200 K

В.С. Вавилов, L.G. Kolodin, B.N. Makashev, K.H. Nussupov, А.В. Спицын, Zh.S. Takibaev, K.B. Tnishtikbaev

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Key concepts: Silicon, Impurity, Radiation, Materials science, Primary (astronomy), Radiochemistry, Chemistry, Physics

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Interaction of the primary radiation defects with impurities in p-type silicon at 80 to 200 K — Research Paper | ScholarLens