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Ultra low noise Q-band monolithic amplifiers using InP- and GaAs-based 0.1 μm HEMT technologies

Michael V. Aust, Tian‐Wei Huang, M.D. DuFault, Hsin Hsiung Wang, D.C.W. Lo, Richard K. Lai, M. Biedenbender, Cheng Chih Yang

Open publisher page 12 citations

Abstract

Design and development of ultra low noise MMIC Q-band LNAs using both InP- and GaAs-based 0.1 /spl mu/m HEMT technologies with state-of-the-art noise figures are reported in this paper. For InAlAs-InGaAs-InP HEMT LNAs, we have achieved noise figure performance as low as 1.6 dB with 10 dB associated gain for a one-stage LNA. With a two stage design, 20 dB gain with 1.8 dB noise figure was obtained. Single- and multistage MMIC LNAs were also designed and fabricated using a production 0.1 /spl mu/m AlGaAs-InGaAs-GaAs HEMT process. A four-stage LNA also demonstrated 2.5 dB noise figure with 28 dB gain, which is the best MMIC LNA result ever reported for on GaAs-based HEMTs.

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What this paper is about

Design and development of ultra low noise MMIC Q-band LNAs using both InP- and GaAs-based 0.1 /spl mu/m HEMT technologies with state-of-the-art noise figures are reported in this paper. For InAlAs-InGaAs-InP HEMT LNAs, we have achieved noise figure performance as low as 1.6 dB with 10 dB associated gain for a one-stage LNA. With a two stage design, 20 dB gain with 1.8 dB noise figure was obtained. Single- and multistage MMIC LNAs were also designed and fabricated using a production 0.1 /spl mu/m AlGaAs-InGaAs-GaAs HEMT process. A four-stage LNA also demonstrated 2.5 dB noise figure with 28 dB gain, which is the best MMIC LNA result ever reported for on GaAs-based HEMTs.

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Available abstract

Design and development of ultra low noise MMIC Q-band LNAs using both InP- and GaAs-based 0.1 /spl mu/m HEMT technologies with state-of-the-art noise figures are reported in this paper. For InAlAs-InGaAs-InP HEMT LNAs, we have achieved noise figure performance as low as 1.6 dB with 10 dB associated gain for a one-stage LNA. With a two stage design, 20 dB gain with 1.8 dB noise figure was obtained. Single- and multistage MMIC LNAs were also designed and fabricated using a production 0.1 /spl mu/m AlGaAs-InGaAs-GaAs HEMT process. A four-stage LNA also demonstrated 2.5 dB noise figure with 28 dB gain, which is the best MMIC LNA result ever reported for on GaAs-based HEMTs.

Key concepts: Monolithic microwave integrated circuit, High-electron-mobility transistor, Noise figure, Gallium arsenide, Low-noise amplifier, Optoelectronics, Amplifier, Noise (video)

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