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Development of a theoretical model for annealing of radiation damage in semiconductor devices

V. Litovchenko

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Abstract

The radiation response of Metal Oxide Semiconductor (MOS) devices and Integrated Circuits (ICs) was studied theoretically. The case of short-term annealing and the rebound effect are modeled mathematically using the linear response theory.

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What this paper is about

The radiation response of Metal Oxide Semiconductor (MOS) devices and Integrated Circuits (ICs) was studied theoretically. The case of short-term annealing and the rebound effect are modeled mathematically using the linear response theory.

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Available abstract

The radiation response of Metal Oxide Semiconductor (MOS) devices and Integrated Circuits (ICs) was studied theoretically. The case of short-term annealing and the rebound effect are modeled mathematically using the linear response theory.

Key concepts: Annealing (glass), Semiconductor, Semiconductor device, Integrated circuit, Materials science, Radiation, Optoelectronics, Electronic engineering

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