A Method for Precise TEM Sample Preparation Using the FIB Ex-Situ Lift-Out Technique with a Modified Copper Ring in Semiconductor Devices

This paper describes a new method that uses a Focused Ion Beam (FIB), an ex‐situ lift‐out system, and a modified copper ring for precise Transmission Electron Microscope (TEM) sample preparation in semiconductor devices. This technique ensures the electron transparent area of a specific site cross‐sectional sample for TEM imaging and compositional analysis is not obstructed. Moreover, multiple samples can be placed onto one copper ring for TEM analysis and the sample can be returned to the FIB after TEM analysis if further thinning is needed. In summary, this novel approach provides an alternative for precise TEM sample preparation, which will achieve high throughput and quality of TEM analysis.