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2005•Unpublished venueRequires access

Carrier lifetimes and gain in 1.3-μm strained lnAsP/lnGaAsP multiple-quantum-well lasers

J.M. Pifcaf, P. Thiagarajan, Carmen S. Menoni, G. Y. Robinson, H. Temkin

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Abstract

We report on measurements of differential carrier lifetime and gain as a function of carrier density, as well as total carrier lifetime at threshold in InAsP separate confinement multiple quantum well buried heterostructure (SCH-MQW-BH) lasers.

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What this paper is about

We report on measurements of differential carrier lifetime and gain as a function of carrier density, as well as total carrier lifetime at threshold in InAsP separate confinement multiple quantum well buried heterostructure (SCH-MQW-BH) lasers.

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Available abstract

We report on measurements of differential carrier lifetime and gain as a function of carrier density, as well as total carrier lifetime at threshold in InAsP separate confinement multiple quantum well buried heterostructure (SCH-MQW-BH) lasers.

Key concepts: Optoelectronics, Quantum well, Laser, Materials science, Physics, Optics

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Carrier lifetimes and gain in 1.3-μm strained lnAsP/lnGaAsP multiple-quantum-well lasers — Research Paper | ScholarLens