2003•Applied Physics LettersRequires access
Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes
Satoshi Watanabe, Norihide Yamada, Masakazu Nagashima, Yusuke Ueki, Chiharu Sasaki, Yoichi Yamada, Tsunemasa Taguchi, Kazuyuki Tadatomo, Hiroaki Okagawa, Hiromitsu Kudo
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Abstract
The internal quantum efficiency (IQE) of highly-efficient near-UV light-emitting diodes, which shows an external quantum efficiency of 43% at 406 nm, has been measured by excitation power and temperature-dependent photoluminescence (PL). Assuming peak PL quantum efficiency at 8 K is 100%, peak IQE at 300 K was measured to be as high as 63%. At the injected carrier density, which corresponds to 20 mA current injection, IQE and light extraction efficiency were estimated to be about 54% and 80%, respectively.