Thermal Analysis of the Double‐Crucible Method in Continuous Silicon Czochralski Processing: I . Experimental Analysis

In the double‐crucible method, the temperatures of the silicon melt and of the surface of the quartz crucible were measured and compared to those of the single crucible case. The temperature of the crucible is required for the boundary conditions of the numerical simulations. The temperature gradient was measured across the thickness of the inner quartz crucible. The temperature at the outer surface of this crucible was higher by 20–25°C than in the case of the single crucible. The influence of the fed material silicon on the melt temperature, and the temperature response of the CZ system to the heater power change were also investigated.