Possible centers of broadband near-IR luminescence in bismuth-doped solids: $Bi^{+}$, Bi$_5^{3+}$, and Bi$_4^0$
V. O. Sokolov, В. Г. Плотниченко, Е. М. Dianov
Abstract
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V. O. Sokolov, В. Г. Плотниченко, Е. М. Dianov
Abstract
Open-access reader
Subvalent bismuth centers (interstitial $Bi^{+}$ ion, Bi$_5^{3+}$ cluster ion, and Bi$_4^0$ cluster) are examined as possible centers of broadband near-IR luminescence in bismuth-doped solids on the grounds of quantum-chemical modeling and experimental data.
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Subvalent bismuth centers (interstitial $Bi^{+}$ ion, Bi$_5^{3+}$ cluster ion, and Bi$_4^0$ cluster) are examined as possible centers of broadband near-IR luminescence in bismuth-doped solids on the grounds of quantum-chemical modeling and experimental data.
Key concepts: Bismuth, Luminescence, Cluster (spacecraft), Broadband, Ion, Materials science, Doping, Optoelectronics