Atomic arrangements of (Ga1−xMnx)N nanorods grown on Al2O3 substrates
K. H. Lee, Jeong Yong Lee, Jae-Hun Jung, T. W. Kim, H. C. Jeon, Tae-Won Kang
Abstract
K. H. Lee, Jeong Yong Lee, Jae-Hun Jung, T. W. Kim, H. C. Jeon, Tae-Won Kang
Abstract
X-ray diffraction (XRD) and selected area electron diffraction pattern (SADP) results showed that the (Ga1−xMnx)N nanorods had preferential c-axial growth direction. Transmission electron microscopy (TEM) and high-resolution TEM (HRTEM) images showed that one-dimensional (Ga1−xMnx)N nanorods without defects had c-axis-oriented crystalline wurzite structures. Atomic arrangements for the (Ga1−xMnx)N nanorods grown on the Al2O3 (0001) substrates are described on the basis of the XRD, the TEM, the SADP, and the HRTEM results.
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X-ray diffraction (XRD) and selected area electron diffraction pattern (SADP) results showed that the (Ga1−xMnx)N nanorods had preferential c-axial growth direction. Transmission electron microscopy (TEM) and high-resolution TEM (HRTEM) images showed that one-dimensional (Ga1−xMnx)N nanorods without defects had c-axis-oriented crystalline wurzite structures. Atomic arrangements for the (Ga1−xMnx)N nanorods grown on the Al2O3 (0001) substrates are described on the basis of the XRD, the TEM, the SADP, and the HRTEM results.
Key concepts: Nanorod, High-resolution transmission electron microscopy, Transmission electron microscopy, Selected area diffraction, Electron diffraction, Materials science, Diffraction, Crystallography