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2004•Virtual Community of Pathological Anatomy (University of Castilla La Mancha)Open access

Low Phase Noise, Very Wide Band SiGe Fully Integrated VCO

L. Romano, V. Minerva, Silvia Cavalieri D'Oro, M. Politi, Carlo Samori, M. Pagani

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Abstract

This paper presents a fully integrated, low phase noise SiGe voltage-controlled oscillator with very wide band for digital radio link applications. The VCO has been fabricated using IBM 0.5µm SiGe5AM process. A measured 38.5% tuning range around 5.2 GHz and a singlesideband phase noise varying between –100 and –96 dBc/Hz at 100kHz offset from carrier have been achieved. The oscillator’s core draws 9 to 17mA from a 3V supply voltage.

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What this paper is about

This paper presents a fully integrated, low phase noise SiGe voltage-controlled oscillator with very wide band for digital radio link applications. The VCO has been fabricated using IBM 0.5µm SiGe5AM process. A measured 38.5% tuning range around 5.2 GHz and a singlesideband phase noise varying between –100 and –96 dBc/Hz at 100kHz offset from carrier have been achieved. The oscillator’s core draws 9 to 17mA from a 3V supply voltage.

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Available abstract

This paper presents a fully integrated, low phase noise SiGe voltage-controlled oscillator with very wide band for digital radio link applications. The VCO has been fabricated using IBM 0.5µm SiGe5AM process. A measured 38.5% tuning range around 5.2 GHz and a singlesideband phase noise varying between –100 and –96 dBc/Hz at 100kHz offset from carrier have been achieved. The oscillator’s core draws 9 to 17mA from a 3V supply voltage.

Key concepts: Phase noise, Voltage-controlled oscillator, dBc, Electrical engineering, Offset (computer science), Voltage, Materials science, Electronic engineering

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