2002•Unpublished venueRequires access
Applications of high power tapered gain region devices
Jeffrey Livas, S. R. Chinn, E. S. Kintzer, J. N. Walpole, C.A. Wang, L.J. Missaggia
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Abstract
An important application of tapered gain region semiconductor lasers is as a pump source for erbium doped fiber amplifiers. We have been developing a 1 Watt-class erbium-doped transmitter amplifier for optical intersatellite communications. Previously, high power erbium-doped amplifiers have been demonstrated using erbium-ytterbium codoped fiber and Nd:YAG pumps, but this approach has a lower wall-plug efficiency than directly pumping at 980 nm. We will discuss recent high power EDFA results.