Photoluminescence and Raman spectral study of C incorporation in strained Si1−x−yGexCy epilayers on Si(100)

Photoluminescence (PL) and Raman spectroscopy have been used to study the incorporation of C in strained Si1−x−yGexCy epilayers lattice matched to Si(001). The samples were characterized by both secondary ion mass spectrometry and Auger emission spectroscopy to obtain the total C concentration and x-ray diffraction data were used to obtain the substitutional C concentration. The difference between the total and substitutional C concentrations, i.e., the nonsubstitutional carbon fraction, was found to be directly correlated with specific spectral lines in both the room temperature Raman and low temperature PL spectra. These variations are discussed and related to C related defects in the epilayers.