2014Unpublished venueRequires access

Memory Technologies: Status and Perspectives

Victor V. Zhirnov, Matthew J. Marinella

Open publisher page 1 citations

Abstract

This chapter provides an outlook for the current baseline memory technologies based on storing electron charge, which include dynamic random access memory (DRAM), static random access memory (SRAM), and flash memory. The physics of all charge-based memory devices is analyzed using the barrier model, which allows derivation of the key performance parameters as well as scaling and performance projections. This chapter has a special emphasis on the energetics of charge-based memory, including cell, array, and system levels.

About this research paper

What this paper is about

This chapter provides an outlook for the current baseline memory technologies based on storing electron charge, which include dynamic random access memory (DRAM), static random access memory (SRAM), and flash memory. The physics of all charge-based memory devices is analyzed using the barrier model, which allows derivation of the key performance parameters as well as scaling and performance projections. This chapter has a special emphasis on the energetics of charge-based memory, including cell, array, and system levels.

Why it matters

OpenAlex reports 1 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

This chapter provides an outlook for the current baseline memory technologies based on storing electron charge, which include dynamic random access memory (DRAM), static random access memory (SRAM), and flash memory. The physics of all charge-based memory devices is analyzed using the barrier model, which allows derivation of the key performance parameters as well as scaling and performance projections. This chapter has a special emphasis on the energetics of charge-based memory, including cell, array, and system levels.

Key concepts: Dynamic random-access memory, Static random-access memory, Dram, Universal memory, Semiconductor memory, Memory refresh, Non-volatile random-access memory, Computer science

Related papers

Back to paper searchBrowse research topicsOriginal source
Memory Technologies: Status and Perspectives — Research Paper | ScholarLens