Н.Н. Беспалов, M. V. Ilyin, S. S. Kapitonov, A. E. Lysenkov
Abstract
The article deals with a program for modeling the transient off of power semiconductor devices, which allows to take into account the parameters of a semiconductor structure of power semiconductor devices and circuitry.
OpenAlex reports 12 citations for this work. Citation counts describe recorded attention and do not establish research quality.
A contribution statement is not available in the OpenAlex record.
Method details are not available in the OpenAlex metadata.
Findings are not separately available in the OpenAlex metadata.
Limitations are not available in the OpenAlex metadata.
Application details are not available in the OpenAlex metadata.
The article deals with a program for modeling the transient off of power semiconductor devices, which allows to take into account the parameters of a semiconductor structure of power semiconductor devices and circuitry.
Key concepts: Semiconductor device, Transient (computer programming), Semiconductor, Power semiconductor device, Power (physics), Semiconductor device modeling, Computer science, Electronic engineering