Shuo Sun, Mei‐Hui Tsai, C.E. Tsai, Hsin‐Tien Chiu
Abstract
A low-resistivity and low carbon concentration CVD TaN film has been realized by using a new precursor terbutylimido-tris-diethylamido tantalum (TBTDET). Results show that CVD TaN as a diffusion barrier for Cu has higher thermal stability up to 500/spl deg/C than CVD TiN of 450/spl deg/C.
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A low-resistivity and low carbon concentration CVD TaN film has been realized by using a new precursor terbutylimido-tris-diethylamido tantalum (TBTDET). Results show that CVD TaN as a diffusion barrier for Cu has higher thermal stability up to 500/spl deg/C than CVD TiN of 450/spl deg/C.
Key concepts: Tantalum nitride, Tantalum, Diffusion barrier, Materials science, Copper, Thermal stability, Tin, Electrical resistivity and conductivity