2003Unpublished venueRequires access

The influence of cross-tie wall on the magnetoresistance of patterned Permalloy films

J. C. Wu, H.M. Lee

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Abstract

Summary form only given. Driven by the potential applications in data storage and the understanding of the fundamental micromagnetism, nanostructured magnetic thin films have been under intensive investigation. The recent advances in the nanofabrication and microscopy of the magnetic domain structures have led to more optimization of the magnetic field sensors. We present a correlation between the magnetization evolution in patterned elliptical Permalloy elements and their corresponding magnetoresistance (MR).

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What this paper is about

Summary form only given. Driven by the potential applications in data storage and the understanding of the fundamental micromagnetism, nanostructured magnetic thin films have been under intensive investigation. The recent advances in the nanofabrication and microscopy of the magnetic domain structures have led to more optimization of the magnetic field sensors. We present a correlation between the magnetization evolution in patterned elliptical Permalloy elements and their corresponding magnetoresistance (MR).

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Available abstract

Summary form only given. Driven by the potential applications in data storage and the understanding of the fundamental micromagnetism, nanostructured magnetic thin films have been under intensive investigation. The recent advances in the nanofabrication and microscopy of the magnetic domain structures have led to more optimization of the magnetic field sensors. We present a correlation between the magnetization evolution in patterned elliptical Permalloy elements and their corresponding magnetoresistance (MR).

Key concepts: Permalloy, Micromagnetics, Magnetoresistance, Materials science, Magnetic domain, Magnetization, Condensed matter physics, Nanolithography

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