2003•International Conference on Molecular Bean EpitaxyRequires access
GaAs-based red-emitting InAlAs/AlGaAs quantum dots and quantum-dot laser
H.Y. Liu, R. Airey, M. J. Steer, P.A. Houston, Ian R. Sellers, D. J. Mowbray
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Abstract
Semiconductor quantum dots (QDs) are the subject of extensive study due to their promising applications in novel optoelectronics devices. However relatively few studies of red-emitting QDs have been reported due mainly to the difficulty in fabricating high-quality InAlAs/AlGaAs on GaAs substrates. We study the effect of growth temperature on the optical and structural properties of InAlAs/AlGaAs QDs. With increasing substrate temperature from 530 to 560/spl deg/C, a significant improvement in the QD material quality is observed. In addition at room temperature, ground state lasing is demonstrated for a laser with six InAlAs/AlGaAs QD layers grown at 560/spl deg/C.