2005•Unpublished venueRequires access

Study on resonant tunneling diode

Guo Weilian, Niu Ping-juan, Huilai Liang, Shilin Zhang

Abstract

We designed and fabricated an AlAs/GaAs/InGaAs/GaAs/AlAs Resonant Tunneling Diode (RTD) with two types of epitaxial structures grown by Molecular Beam Epitaxy (MBE). The devices have shown excellent I-V characteristics with peak-valley current ratio (PVCR) 5:1 at room temperature and a high peak current density. The DC and AC characterizations are reported and analyzed.

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Available abstract

Key concepts: Molecular beam epitaxy, Quantum tunnelling, Resonant-tunneling diode, Diode, Optoelectronics, Materials science, Gallium arsenide, Epitaxy