Unified theory of reverse blocking dynamics in high-voltage cascode devices

This paper investigates the dynamic evolution of the internal voltages in cascode-based high-voltage devices under reverse blocking mode. For the first time, this analysis covers blocking times ranging from fast transitions to steady-state, where leakage current plays a predominant role. A theoretical model is developed with the support of simulation and experimental data for cascode switch and rectifier, constituted by GaN-HEMTs (600V) and Si-FETs (30V). Finally, this knowledge is used to build a GaN cascode switch with enhanced electrical performance and ruggedness.