Measurement of the tradeoff between intrinsic emittance and quantum efficiency from a NaKSb photocathode near threshold

We measure the tradeoff between the quantum efficiency and intrinsic emittance from a NaKSb photocathode at three increasing wavelengths (635, 650, and 690 nm) at or below the energy of the bandgap plus the electron affinity, hν≤Eg+Ea. These measurements were performed using a high voltage dc gun for varied photocathode surface fields of 1.4−4.4 MV/m. Measurements of intrinsic emittance are performed using two different methods and were found to agree. At the longest wavelength available, 690 nm, the intrinsic emittance was 0.26 μm/mm-rms with a quantum efficiency of ∼10−4. The suitability of NaKSb emitting at threshold for various low emittance applications is discussed.