Electrical Characterization of Ag/n-GaP Schottky Diode

An Ag/n-GaP schottky barrier diode was fabricated and the electrical properties of its were investigated by evaluating its current-voltage (I-V) characteristics under temperatures and capacitance –voltage (C-V) characteristics under various frequency. The electronic parameters such as ideality factor, barrier height and series resistance were determined from forward bias I-V method and Cheung’s functions. Results indicate that the barrier height of Ag/n-GaP diode increased almost linearly with increase in temperature, while the ideality factor decreased. The series resistance effect for Ag/n-GaP Schottky diode was analyzed. Series resistances in this Schottky diode are determined 4.284 kΩ at 298 K and 6.383 kΩ at 403K. The space charge density of this shottky diode was calculated 1.49.1019 cm-3 and diffusion potential obtained 1.08 eV from C-V measurement.