2002•Unpublished venueRequires access

Room temperature lasing at lower-order subband of self-formed InGaAs quantum dot lasers with multi-stacked dot layer

H. Shoji, Yoshihiro Nakata, Kohki Mukai, Yoshihiro Sugiyama, Mitsuru Sugawara, Naoki Yokoyama, Hiroshi Ishikawa

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Abstract

Self-formed InGaAs quantum dot lasers with multi-stacked dot layer have been fabricated. Room temperature lasing at a lower-order subband have been observed with an increasing number of quantum dot layer and with decreasing cavity loss.

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What this paper is about

Self-formed InGaAs quantum dot lasers with multi-stacked dot layer have been fabricated. Room temperature lasing at a lower-order subband have been observed with an increasing number of quantum dot layer and with decreasing cavity loss.

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Available abstract

Self-formed InGaAs quantum dot lasers with multi-stacked dot layer have been fabricated. Room temperature lasing at a lower-order subband have been observed with an increasing number of quantum dot layer and with decreasing cavity loss.

Key concepts: Lasing threshold, Quantum dot, Quantum dot laser, Optoelectronics, Materials science, Laser, Gallium arsenide, Layer (electronics)

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Room temperature lasing at lower-order subband of self-formed InGaAs quantum dot lasers with multi-stacked dot layer — Research Paper | ScholarLens