Room temperature lasing at lower-order subband of self-formed InGaAs quantum dot lasers with multi-stacked dot layer
H. Shoji, Yoshihiro Nakata, Kohki Mukai, Yoshihiro Sugiyama, Mitsuru Sugawara, Naoki Yokoyama, Hiroshi Ishikawa
Abstract
H. Shoji, Yoshihiro Nakata, Kohki Mukai, Yoshihiro Sugiyama, Mitsuru Sugawara, Naoki Yokoyama, Hiroshi Ishikawa
Abstract
Self-formed InGaAs quantum dot lasers with multi-stacked dot layer have been fabricated. Room temperature lasing at a lower-order subband have been observed with an increasing number of quantum dot layer and with decreasing cavity loss.
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Self-formed InGaAs quantum dot lasers with multi-stacked dot layer have been fabricated. Room temperature lasing at a lower-order subband have been observed with an increasing number of quantum dot layer and with decreasing cavity loss.
Key concepts: Lasing threshold, Quantum dot, Quantum dot laser, Optoelectronics, Materials science, Laser, Gallium arsenide, Layer (electronics)