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In-situ integrated processing of thin films of high temperature superconductors and related materials by MOCVD for device applications

R. Singh, Santanu Sinha, N. J. Hsu, Amit Kumar, R. P. S. Thakur, Penchu Chou, J. Narayan

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Abstract

Metal organic chemical vapor deposition (MOCVD) has the potential of emerging as a major technique for the deposition of thin films of high temperature superconductors and related materials. In this paper, we present preliminary results of in‐situ preparation of Y‐Ba‐Cu‐O on yttria‐stabilized zirconia (YSZ) and silicon substrates.

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Metal organic chemical vapor deposition (MOCVD) has the potential of emerging as a major technique for the deposition of thin films of high temperature superconductors and related materials. In this paper, we present preliminary results of in‐situ preparation of Y‐Ba‐Cu‐O on yttria‐stabilized zirconia (YSZ) and silicon substrates.

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Available abstract

Metal organic chemical vapor deposition (MOCVD) has the potential of emerging as a major technique for the deposition of thin films of high temperature superconductors and related materials. In this paper, we present preliminary results of in‐situ preparation of Y‐Ba‐Cu‐O on yttria‐stabilized zirconia (YSZ) and silicon substrates.

Key concepts: Metalorganic vapour phase epitaxy, Materials science, Chemical vapor deposition, Yttria-stabilized zirconia, Thin film, In situ, Superconductivity, Cubic zirconia

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