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Distributed GaAs FET Circuit Model for Broadband and Millimeter Wave Applications

R.A. LaRue, C. Yuen, G. Zdasiuk

Open publisher page 25 citations

Abstract

In this distributed. paper, the Z-parameters of a fully equivalent circuit MESFET model are presented as simple, closed-form expressions. The benefit of this new model is to extend the frequency range of accurate, predicted device performance beyond that of a simple lumped element model . Comparison with the simpler circuit model shows differences at frequencies beyond 18 GHz for a 285-micron x 0.5-micron GaAs MESFET.

About this research paper

What this paper is about

In this distributed. paper, the Z-parameters of a fully equivalent circuit MESFET model are presented as simple, closed-form expressions. The benefit of this new model is to extend the frequency range of accurate, predicted device performance beyond that of a simple lumped element model . Comparison with the simpler circuit model shows differences at frequencies beyond 18 GHz for a 285-micron x 0.5-micron GaAs MESFET.

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OpenAlex reports 25 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

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Method / approach

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Available abstract

In this distributed. paper, the Z-parameters of a fully equivalent circuit MESFET model are presented as simple, closed-form expressions. The benefit of this new model is to extend the frequency range of accurate, predicted device performance beyond that of a simple lumped element model . Comparison with the simpler circuit model shows differences at frequencies beyond 18 GHz for a 285-micron x 0.5-micron GaAs MESFET.

Key concepts: MESFET, Equivalent circuit, Broadband, Distributed element model, Extremely high frequency, Gallium arsenide, Simple (philosophy), Monolithic microwave integrated circuit

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