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2015•Unpublished venueRequires access

The physics of conductivity at terahertz frequencies

Matt Kirley, John H. Booske

Open publisher page 7 citations

Abstract

Effective terahertz (THz) component and systems design requires accurate predictive models for the frequency-dependent conductivity of materials. We have measured the THz conductivity of metals (including rough surface effects) and doped silicon at 0.4 - 0.85 THz. After a comprehensive analysis, we conclude that the THz-regime conductivity of highly-doped Si is accurately described by Drude theory, while metal conductivity is accurately described by a combination of measured DC conductivity, Drude theory, and the Hammerstad-Bekkadal formula.

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What this paper is about

Effective terahertz (THz) component and systems design requires accurate predictive models for the frequency-dependent conductivity of materials. We have measured the THz conductivity of metals (including rough surface effects) and doped silicon at 0.4 - 0.85 THz. After a comprehensive analysis, we conclude that the THz-regime conductivity of highly-doped Si is accurately described by Drude theory, while metal conductivity is accurately described by a combination of measured DC conductivity, Drude theory, and the Hammerstad-Bekkadal formula.

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Available abstract

Effective terahertz (THz) component and systems design requires accurate predictive models for the frequency-dependent conductivity of materials. We have measured the THz conductivity of metals (including rough surface effects) and doped silicon at 0.4 - 0.85 THz. After a comprehensive analysis, we conclude that the THz-regime conductivity of highly-doped Si is accurately described by Drude theory, while metal conductivity is accurately described by a combination of measured DC conductivity, Drude theory, and the Hammerstad-Bekkadal formula.

Key concepts: Terahertz radiation, Conductivity, Drude model, Doping, Materials science, Surface conductivity, Condensed matter physics, Silicon

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