2008•Materials Science in Semiconductor ProcessingRequires access

Inductively coupled plasma reactive ion etching of sapphire using C2F6- and NF3-based gas mixtures

Dong‐Jin Kang, Il‐Soo Kim, Jong‐Ha Moon, Byung‐Teak Lee

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Key concepts: Reactive-ion etching, Inductively coupled plasma, Sapphire, Etching (microfabrication), Materials science, Plasma, Wafer, Analytical Chemistry (journal)