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A Fast and Accurate Method of Extracting Two Critical Device Parameters of SAGCM InP/InGaAs Avalanche Photodiodes

C. L. F., M. Jamal Deen, L.E. Tarof

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Abstract

Separate absorption, grading, charge, and multiplication (SAGCM) InP/InGaAs avalanche photodiodes (APDs) are the preferred candidates in long haul fibre optical telecommunication systems. In this paper, we report a simple, fast, accurate, and non-destructive technique for extracting of two critical device parameter - multiplication layer thickness X d and charge sheet density ?, using punchthrough and breakdown voltages obtained from DC measurements. Impact ionization in InGaAs absorption layer is considered and we show that it can be neglected if the breakdown voltages are not high. We consider in detail the uncertainties from all sources, and conclude that the accuracy for X d is ≪ 0.05 ?m, and for ?a is ≪ 3%.

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What this paper is about

Separate absorption, grading, charge, and multiplication (SAGCM) InP/InGaAs avalanche photodiodes (APDs) are the preferred candidates in long haul fibre optical telecommunication systems. In this paper, we report a simple, fast, accurate, and non-destructive technique for extracting of two critical device parameter - multiplication layer thickness X d and charge sheet density ?, using punchthrough and breakdown voltages obtained from DC measurements. Impact ionization in InGaAs absorption layer is considered and we show that it can be neglected if the breakdown voltages are not high. We consider in detail the uncertainties from all sources, and conclude that the accuracy for X d is ≪ 0.05 ?m, and for ?a is ≪ 3%.

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Available abstract

Separate absorption, grading, charge, and multiplication (SAGCM) InP/InGaAs avalanche photodiodes (APDs) are the preferred candidates in long haul fibre optical telecommunication systems. In this paper, we report a simple, fast, accurate, and non-destructive technique for extracting of two critical device parameter - multiplication layer thickness X d and charge sheet density ?, using punchthrough and breakdown voltages obtained from DC measurements. Impact ionization in InGaAs absorption layer is considered and we show that it can be neglected if the breakdown voltages are not high. We consider in detail the uncertainties from all sources, and conclude that the accuracy for X d is ≪ 0.05 ?m, and for ?a is ≪ 3%.

Key concepts: Avalanche photodiode, APDS, Indium gallium arsenide, Optoelectronics, Materials science, Impact ionization, Photodiode, Avalanche breakdown

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