A resonant MOSFET gate driver with complete energy recovery
Yuhui Chen, F.C. Lee, L. Amoroso, Ho-Pu Wu
Abstract
Yuhui Chen, F.C. Lee, L. Amoroso, Ho-Pu Wu
Abstract
At high frequency power conversion applications, the power loss in driving power MOSFETs is significant. To reduce this loss, some resonant MOSFET gate drive schemes have been published. In this paper, a new resonant gate driver is proposed. In contrast with other gate drive schemes, the proposed driver features complete energy recovery during both charging and discharging transitions, as well as minimized conduction loss. Simulation and experiment results show that the proposed driver can reduce MOSFET gate drive loss very effectively.
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At high frequency power conversion applications, the power loss in driving power MOSFETs is significant. To reduce this loss, some resonant MOSFET gate drive schemes have been published. In this paper, a new resonant gate driver is proposed. In contrast with other gate drive schemes, the proposed driver features complete energy recovery during both charging and discharging transitions, as well as minimized conduction loss. Simulation and experiment results show that the proposed driver can reduce MOSFET gate drive loss very effectively.
Key concepts: Gate driver, MOSFET, Power MOSFET, Power (physics), Electrical engineering, Logic gate, Power loss, Power semiconductor device