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2009•The Transactions of the Korean Institute of Power ElectronicsRequires access

Overvoltage Snubber for a Diode-Clamped 3-level IGBT Inverter

Jae-Hun Jung, Woong-Hyub Song, Eui‐Cheol Nho, In-Dong Kim, Heung-Geun Kim, Tae-Won Chun, Dong-Wook Yoo

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Abstract

This paper deals with a new overvoltage snubber for a diode-clamped 3-level IGBT inverter. Usually most power converters use snubber circuits to protect the switching devices from voltage spike. However, it is difficult for the diode-clamped multi-level converter to be protected from voltage spike with overvoltage snubber since the series connection of the switching devices. To solve the problem the characteristic of a overvoltage snubber for a DC-DC converter is analyzed, and a new snubber for a diode clamped 3-level inverter is proposed. The performance of the proposed snubber is verified through experiments.

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What this paper is about

This paper deals with a new overvoltage snubber for a diode-clamped 3-level IGBT inverter. Usually most power converters use snubber circuits to protect the switching devices from voltage spike. However, it is difficult for the diode-clamped multi-level converter to be protected from voltage spike with overvoltage snubber since the series connection of the switching devices. To solve the problem the characteristic of a overvoltage snubber for a DC-DC converter is analyzed, and a new snubber for a diode clamped 3-level inverter is proposed. The performance of the proposed snubber is verified through experiments.

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Available abstract

This paper deals with a new overvoltage snubber for a diode-clamped 3-level IGBT inverter. Usually most power converters use snubber circuits to protect the switching devices from voltage spike. However, it is difficult for the diode-clamped multi-level converter to be protected from voltage spike with overvoltage snubber since the series connection of the switching devices. To solve the problem the characteristic of a overvoltage snubber for a DC-DC converter is analyzed, and a new snubber for a diode clamped 3-level inverter is proposed. The performance of the proposed snubber is verified through experiments.

Key concepts: Snubber, Overvoltage, Insulated-gate bipolar transistor, Inverter, Electrical engineering, Diode, Converters, Voltage

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