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THE EFFECT OF REACTOR RADIATION AND TEMPERATURE ON SILICON JUNCTION DIODES

A. Friedman, L.M. Slater, Hirofumi Kan, L.M. Sharpe

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Abstract

The effects of high temperature (up to 300 C) and reactor radiation on silicon junction diode forward and reverse characteristics, switching characteristics, noise, Zener voltage, and Zener slope characteristics were measured using three positions in the BNL Reactor. Eleven types of commercial silicon junction diodes were irradiated. The response to irradiation was found to vary greatly among diodes even of the same type. (W.D.M.)

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What this paper is about

The effects of high temperature (up to 300 C) and reactor radiation on silicon junction diode forward and reverse characteristics, switching characteristics, noise, Zener voltage, and Zener slope characteristics were measured using three positions in the BNL Reactor. Eleven types of commercial silicon junction diodes were irradiated. The response to irradiation was found to vary greatly among diodes even of the same type. (W.D.M.)

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Available abstract

The effects of high temperature (up to 300 C) and reactor radiation on silicon junction diode forward and reverse characteristics, switching characteristics, noise, Zener voltage, and Zener slope characteristics were measured using three positions in the BNL Reactor. Eleven types of commercial silicon junction diodes were irradiated. The response to irradiation was found to vary greatly among diodes even of the same type. (W.D.M.)

Key concepts: Zener diode, Diode, Optoelectronics, Silicon, Materials science, Radiation, Irradiation, Junction temperature

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